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摘要
近年来, 二维材料独特的物理、化学和电子特性受到了越来越多的科研人员的关注. 特别是石墨烯、黑磷和过渡金属硫化物等二维材料具有优良的光电性能和输运性质, 使其在下一代光电子器件领域具有广阔的应用前景. 本文将主要介绍二维材料在光电探测领域上的应用优势, 概述光电探测器的基本原理和参数指标, 重点探讨光栅效应与传统光电导效应的区别, 以及提高光增益和光响应度的原因和特性, 进而回顾光栅局域调控在光电探测器中的最新进展及应用, 最后总结该类光电探测器面临的问题及对未来方向的展望.-
关键词:
- 二维材料 /
- 光电探测 /
- 光栅局域调控 /
- 异质结 /
- 内建电场
Abstract
In recent years, due to their unique physical, chemical and electronic properties, two-dimensional materials have received more and more researchers’ attention. In particular, the excellent optoelectronic properties and transport properties of two-dimensional materials such as graphene, black phosphorous and transition metal sulfide materials make them have broad application prospects in the field of next-generation optoelectronic devices. In this article, we will mainly introduce the advantages of two-dimensional materials in the field of photodetection, outline the basic principles and parameters of photodetectors, focus on the difference between the grating effect and the traditional photoconductive effect, and the reasons and characteristics of improving optical gain and optical responsivity. Then we review the latest developments and applications of grating local control in photodetectors, and finally summarize the problems faced by the photodetectors of this kind and their prospects for the future.-
Keywords:
- two-dimensional material /
- photoelectric detection /
- photogating effect /
- heterojunction /
- built-in electric field
作者及机构信息
Authors and contacts
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施引文献
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图 1 光栅效应特性 (a) 光栅效应示意图[ 39]; (b) 光照后, 转移特性曲线
${I}_{\mathrm{d}\mathrm{s}}\text-{V}_{\mathrm{g}}$ , 其中, 黑线、红线和蓝线分别代表暗电流、光栅效应下的光电流以及光栅效应和光电导效应的叠加的光电流; (c)光栅效应器件中的能带排布示意图[44].Fig. 1. The characteristics of the photogating effect: (a) Schematic diagram of the photogating effect[ 39]; (b) the
${I}_{\mathrm{d}\mathrm{s}}\text-{V}_{\mathrm{g}}$ transfer chara-cteristic curve after illumination. The black line, red line and blue line represent dark current, photocurrent of photogating effect, the superimposed photocurrent of photogating effect and photoconductive effect, respectively; (c) schematic diagram of band arrangement in photogating effect devices[44].图 2 单一二维材料光电探测器 (a) 双层石墨烯异质结中的光激发热载流子隧穿[ 6]; (b) p型轻掺杂Si/SiO2衬底上的石墨烯光电探测器的示意图[ 55]; (c) p型InSb衬底上石墨烯场效应晶体管的示意图[ 59]; (d) 电荷陷阱模型和简化的能带图[ 40]; (e) 光响应度与顶栅Vtg的关系[ 65]; (f) 不同衬底下的光响应度[ 58]; (g) 在不同入射功率下, 在最大跨导附近实现最大光电流[ 35]; (h) 光电流与时间的关系[ 67].
Fig. 2. Single two-dimensional material photodetector: (a) Photoexcited hot carrier tunnelling in graphene double-layer heterostructures[ 6]; (b) schematic diagram of the graphene photodetector on lightly p-doped silicon/SiO2 substrate[ 55]; (c) schematic diagram of the InSb-based graphene field effect transistor (FET)[ 59]; (d) charge trapping model and simplified energy band diagram[ 40]; (e) the relationship between photoresponsivity and Vtg[ 65]; (f) photoresponsivity under different substrates[ 58]; (g) the maximum photocurrent is realized near the maximum transconductance at different incident power[ 35]; (h) the relationship between photocurrent and time[ 67].
图 3 石墨烯异质结光电探测器: (a) 石墨烯/ MoS2异质结光电探测器的示意图; (b) 石墨烯/Bi2Te3异质结光电探测器的示意图; (c) 石墨烯/BP异质结光电探测器的示意图; (d)光响应度与光照强度的关系; (e)光响应度与波长的关系(VD = –3 V, VG = –30 V); (f)在波长为980 nm, 光电流和光响应随入射光强的关系 (VDS = 1 V, VG = 0 V).
Fig. 3. The photodetectors based on graphene heterostructures: (a) Schematic of device architecture graphene/MoS2 photodetector[ 77]; (b) schematic of the heterostructure phototransistor device[ 78]; (c) graphene/BP heterostructure photodetector[ 82]; (d) the relationship between photoresponsivity and light intensity[ 89]; (e) responsivity as a function of the wavelength (VD = –3 V, VG = –30 V)[ 85]; (f) photocurrent and photoresponsivity versus incident light power at 980 nm. (VDS = 1 V, VG = 0 V)[ 86].
图 4 基于光栅效应的PN异质结光电探测器 (a) PbI2/WS2异质结构光电探测器; (b) PbI2/WS2光电探测器的光响应时间[ 89]; (c) WSe2 /SnS2多电极异质结构背栅器件的示意图; (d) WSe2/SnS2异质结的能带结构和光激发、层间弛豫过程的示意图[ 90]; (e)基于光栅效应的WSe2/BP光电探测器示意图; (f) 在1 mW/cm2的入射功率密度和0.5 V偏置下, 光增益G和探测率D对不同波长照明的依赖关系[ 93]; (g) 在637 nm光照下器件的示意图; (h)顶栅电极侧面和重叠区域之间形成导电通道Vtg; (i)一个调制周期: 上升时间为10 µs、下降时间为10 µs的快速分量和20 µs的慢速分量组成[ 94].
Fig. 4. PN heterojunction photodetector based on photogating effect: (a) Schematic device structure of PbI2/WS2 photodetector fabricated on SiO2/Si substrate; (b) time-resolved photoresponse of PbI2/WS2 phototransistors[ 89]; (c) schematic diagram of the multi-electrode WSe2/SnS2 vdW heterostructure backgate device; (d) schematic diagram of WSe2/SnS2 heterostructure band structure and photoexcitation, interlayer relaxation process in WSe2/SnS2 heterojunction[ 90]; (e) schematic illustration of the BP on WSe2 photodetector with photogate structure; (f) the dependence of the photogain
$ G $ and detectivity$ {D}^{*} $ on the different wavelength illumination at 1 mW/cm2 incident illumination power density and 0.5 V bias[93]; (g) schematic illustration of the device in the dark under 637 nm illumination; (h) a conductive path for Vtg is formed between side top-gate electrode and overlapped region; (i) a single modulation cycle The rise time is ≈10 µs The fall time consists of a fast component of ≈10 µs and a slow component of ≈ 20 µs[ 94].图 5 基于光栅效应的光电探测器新结构 (a)器件结构示意图; (b)器件结构能带图
Fig. 5. New structure of photodetector based on photogating effect: (a) Schematic diagram of device structure; (b) sche-matic diagram of energy band structure
表 1 基于石墨烯异质结(Gr)的光栅局域调控光电探测器
Table 1. Graphene(Gr)-based photodetectors with grating photogating.
Material Responsivity/(A·W–1) Gain Response time/ms Detection range/nm Ref. Gr/MoSe2 1.3 × 104 — 22000.0 550 [ 83] Gr/MoTe2 970.82 4.69 × 108 78.0 1064 [ 86] Gr/ReS2 7 × 105 — 30.0 550 nm [ 85] Gr/WS2 950 — — 340–680 nm [ 84] Gr/MoS2 107 108 — 650 [ 87] Gr/BP 55.75 — 36.0 655 [ 82] Gr/BiI3 6 × 106 — 8.0 532 [ 88] Gr/PbSe 6613 7824 25.0 — [ 16] Gr/Bi2Te3 35 83 8.7 532—1550 [ 78] Gr/MoS2 5 × 108 — — 635 [ 77] Gr/Bi2Se3 8.18 — — near-IR 750—2500 [ 38] 深圳SEO优化公司木棉湾网站优化按天收费南澳网络营销吉祥百姓网标王推广沙井百度竞价平湖网站推广同乐如何制作网站永湖推广网站盐田网站优化软件爱联SEO按天扣费松岗阿里店铺托管宝安网站定制坪山至尊标王同乐SEO按效果付费南联网络营销福田关键词排名盐田百度爱采购深圳模板制作福田网站搭建福永网页设计福田品牌网站设计坪山百度seo龙岗网站优化按天计费大鹏优秀网站设计荷坳网站搭建沙井模板制作坪地设计网站福田网站seo优化盐田设计网站大鹏关键词按天扣费盐田优秀网站设计歼20紧急升空逼退外机英媒称团队夜以继日筹划王妃复出草木蔓发 春山在望成都发生巨响 当地回应60岁老人炒菠菜未焯水致肾病恶化男子涉嫌走私被判11年却一天牢没坐劳斯莱斯右转逼停直行车网传落水者说“没让你救”系谣言广东通报13岁男孩性侵女童不予立案贵州小伙回应在美国卖三蹦子火了淀粉肠小王子日销售额涨超10倍有个姐真把千机伞做出来了近3万元金手镯仅含足金十克呼北高速交通事故已致14人死亡杨洋拄拐现身医院国产伟哥去年销售近13亿男子给前妻转账 现任妻子起诉要回新基金只募集到26元还是员工自购男孩疑遭霸凌 家长讨说法被踢出群充个话费竟沦为间接洗钱工具新的一天从800个哈欠开始单亲妈妈陷入热恋 14岁儿子报警#春分立蛋大挑战#中国投资客涌入日本东京买房两大学生合买彩票中奖一人不认账新加坡主帅:唯一目标击败中国队月嫂回应掌掴婴儿是在赶虫子19岁小伙救下5人后溺亡 多方发声清明节放假3天调休1天张家界的山上“长”满了韩国人?开封王婆为何火了主播靠辱骂母亲走红被批捕封号代拍被何赛飞拿着魔杖追着打阿根廷将发行1万与2万面值的纸币库克现身上海为江西彩礼“减负”的“试婚人”因自嘲式简历走红的教授更新简介殡仪馆花卉高于市场价3倍还重复用网友称在豆瓣酱里吃出老鼠头315晚会后胖东来又人满为患了网友建议重庆地铁不准乘客携带菜筐特朗普谈“凯特王妃P图照”罗斯否认插足凯特王妃婚姻青海通报栏杆断裂小学生跌落住进ICU恒大被罚41.75亿到底怎么缴湖南一县政协主席疑涉刑案被控制茶百道就改标签日期致歉王树国3次鞠躬告别西交大师生张立群任西安交通大学校长杨倩无缘巴黎奥运
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